In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: fundamental properties and device prototypes

Author： Xu Chi Gallagher J D Wallace P M Senaratne C L Sims P Menéndez J Kouvetakis J

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|10|105028-105036

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105028-105036

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Numerical simulation of the performance of the a-Si:H/a-SiGe:H/a-SiGe:H tandem solar cell

By Shaoying Ke Chong Wang Tao Pan Jie Yang Yu Yang

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 34013-34018

IOP Publishing

Access to resources Recommend Favorite

Very low temperature (450 °C) selective epitaxial growth of heavily

By Aubin J Hartmann J M Veillerot M Essa Z Sermage B

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115006-115015

IOP Publishing

Access to resources Recommend Favorite

Design and fabrication of a 3.3 kV 4H-SiC MOSFET

By Runhua Huang Yonghong Tao Song Bai Gang Chen Ling Wang Ao Liu Neng Wei Yun Li Zhifei Zhao

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 94002-94005

IOP Publishing

Access to resources Recommend Favorite

Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature

By Halpin John E Rhead Stephen D Sanchez Ana M Myronov Maksym Leadley David R

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114009-114014

IOP Publishing

Access to resources Recommend Favorite

Doping and processing epitaxial Ge x Si 1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications

By Lie D.

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 377-401

Springer Publishing Company

Access to resources Recommend Favorite