Very low temperature (450 °C) selective epitaxial growth of heavily

Author： Aubin J Hartmann J M Veillerot M Essa Z Sermage B

E-ISSN： 1361-6641|30|11|115006-115015

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.11, 2015-11, pp. : 115006-115015

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