Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

Author： Ni Yiqiang   Zhou Deqiu   Chen Zijun   Zheng Yue   He Zhiyuan   Yang Fan   Yao Yao   Zhou Guilin   Shen Zhen   Zhong Jian   Wu Zhisheng   Zhang Baijun   Liu Yang  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|10|105037-105045

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105037-105045

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