AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

Author： Witte W.   Reuters B.   Fahle D.   Behmenburg H.   Wang K.R.   Trampert A.   Holländer B.   Hahn H.   Kalisch H.   Heuken M.   Vescan A.  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.8, 2013-08, pp. : 85006-85011

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