Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition

Author： Halder S.   Schneller T.   Waser R.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.87, Iss.4, 2007-06, pp. : 705-708

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors-a critical review

By Kuo Y.  

Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. : 741-745

Elsevier

Access to resources Recommend Favorite

The influence of deposition temperature on the adhesion of diamond films deposited on WC–Co substrates using a Cr–N interlayer

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 11, 2015-11 ,pp. : 2628-2635

John Wiley & Sons Inc

Access to resources Recommend Favorite

Homojunction and heterojunction silicon solar cells deposited by low temperature-high frequency plasma enhanced chemical vapour deposition

By Pla J.   Centurioni E.   Summonte C.   Rizzoli R.   Migliori A.   Desalvo A.   Zignani F.  

Thin Solid Films, Vol. 405, Iss. 1, 2002-02 ,pp. : 248-255

Elsevier

Access to resources Recommend Favorite

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

By  

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 7, 2015-07 ,pp. : 980-984

John Wiley & Sons Inc

Access to resources Recommend Favorite

High-density microwave plasma for high-rate and low-temperature deposition of silicon thin film

By Sakuma Y.   Haiping L.   Ueyama H.   Shirai H.  

Vacuum, Vol. 59, Iss. 1, 2000-10 ,pp. : 266-276

Elsevier

Access to resources Recommend Favorite