Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition

By Flewitt A.J.   Dyson A.P.   Robertson J.   Milne W.I.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 172-177

Elsevier

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Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum-well structures

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Thin Solid Films, Vol. 259, Iss. 2, 1995-04 ,pp. : 225-230

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Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds

By Zajckova L.   Janca J.   Perina V.  

Thin Solid Films, Vol. 338, Iss. 1, 1999-01 ,pp. : 49-59

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Optical, structural and electrical properties of devicequality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

By Giorgis F.   Giuliani F.   Pirri C. F.   Tresso E.   Summonte C.   Rizzoli R.   Galloni R.   Desalvo A.   Rava P.  

Philosophical Magazine B, Vol. 77, Iss. 4, 1998-04 ,pp. : 925-944

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Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition

By Landheer D.   Hulse J.E.   Quance T.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 52-62

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