Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

By Kokubun Y.   Nishio J.   Abe M.   Ehara T.   Nakagomi S.  

Journal of Electronic Materials, Vol. 30, Iss. 1, 2001-01 ,pp. : 23-26

Springer Publishing Company

Access to resources Recommend Favorite

Effects of Substrate Surface Preparation on Chemical Vapor Deposition Growth of 4H-SiC Epitaxial Layers

By Saddow S.E.   Schattner T.E.   Brown J.   Grazulis L.   Mahalingam K.   Landis G.   Bertke R.   Mitchel W.C.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 228-234

Springer Publishing Company

Access to resources Recommend Favorite

Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition

By Wu P.   Yang G.   You L.   Mathur D.   Cocoziello A.   Lang C.   Moore J.   Lu T.   Bakru H.  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 949-953

Springer Publishing Company

Access to resources Recommend Favorite

Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate

By Hansen D.   Charters D.   Au Y.   Mak W.   Tejasukmana W.   Moran P.   Kuech T.  

Journal of Electronic Materials, Vol. 29, Iss. 11, 2000-11 ,pp. : 1312-1318

Springer Publishing Company

Access to resources Recommend Favorite

Growth and characterization of Al 2 O 3 gate dielectric films by low-pressure metalorganic chemical vapor deposition

By Shao Q.-Y.   Li A.-D.   Ling H.-Q.   Wu D.   Wang Y.   Feng Y.   Yang S.-Z.   Liu Z.-G.   Wang M.   Ming N.-B.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 842-848

Elsevier

Access to resources Recommend Favorite