In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

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Journal of Electronic Materials, Vol. 39, Iss. 10, 2010-10 ,pp. : 2237-2242

Springer Publishing Company

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GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates

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Springer Publishing Company

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Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs

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Journal of Semiconductors, Vol. 36, Iss. 3, 2015-03 ,pp. : 34003-34007

IOP Publishing

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Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

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Electrical characteristics of TMAH-surface treated Ni/Au/Al₂O₃/GaN MIS Schottky structures

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