Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2015|821|785-788
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 785-788
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Effects of Neutron and Electron Irradiation on 4H-SiC Diodes
Materials Science Forum, Vol. 2016, Iss. 840, 2016-02 ,pp. :
Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :