Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|840|281-286
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.840, 2016-02, pp. : 281-286
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :