Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing

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1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

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An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

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Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

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Surface electrical conductivity of Co+-implanted a-SiC : H films

By Sealy B.   Gwilliam R.   Shannon J.   Jeynes C.   Angelov C.   Tsvetkova T.  

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