Shallow and Deep Levels in Al⁺-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy

E-ISSN： 1662-9752|2015|821|403-406

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 403-406

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