Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|63-66

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 63-66

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 789-792

Trans Tech Publications

Access to resources Recommend Favorite

Optimization of VLS Growth Process for 4H-SiC P/N Junctions

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 205-208

Trans Tech Publications

Access to resources Recommend Favorite

Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 620-623

Trans Tech Publications

Access to resources Recommend Favorite

Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 773-776

Trans Tech Publications

Access to resources Recommend Favorite

Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 628-631

Trans Tech Publications

Access to resources Recommend Favorite