Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2015|821|307-310

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 307-310

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Abstract