Transmission electron microscope study of a threading dislocation with b = [0001] + <11̅00> and its effect on leakage in a 4H–SiC MOSFET

Author： Onda Shoichi   Watanabe Hiroki   Kito Yasuo   Kondo Hiroyuki   Uehigashi Hideyuki   Hosokawa Norikazu   Hisada Yoshiyuki   Shiraishi Kenji   Saka Hiroyasu  

Publisher： Taylor & Francis Ltd

ISSN： 1362-3036

Source： Philosophical Magazine Letters, Vol.93, Iss.8, 2013-08, pp. : 439-447

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