Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

By  

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 23005-23008

IOP Publishing

Access to resources Recommend Favorite

The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

By Fu Binglei   Liu Naixin   Zhang Ning   Si Zhao   Wei Xuecheng   Wang Xiaodong   Lu Hongxi   Liu Zhe   Wei Tongbo   Yi Xiaoyan   Li Jinmin   Wang Junxi  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1244-1248

Springer Publishing Company

Access to resources Recommend Favorite

Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

By Danmei Zhao   Degang Zhao   Desheng Jiang   Zongshun Liu   Jianjun Zhu   Ping Chen   Wei Liu   Xiang Li   Ming Shi  

Journal of Semiconductors, Vol. 36, Iss. 6, 2015-06 ,pp. : 63003-63006

IOP Publishing

Access to resources Recommend Favorite

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

By Okada Narihito   Tadatomo Kazuyuki  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24003-24011

IOP Publishing

Access to resources Recommend Favorite

Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

By Kokubun Y.   Nishio J.   Abe M.   Ehara T.   Nakagomi S.  

Journal of Electronic Materials, Vol. 30, Iss. 1, 2001-01 ,pp. : 23-26

Springer Publishing Company

Access to resources Recommend Favorite