Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

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IOP Publishing

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Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

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Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

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Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

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