Capacitance-voltage study of SiO 2 /nanocrystalline silicon/SiO 2 double-barrier structures

Author： Wu L. Huang X. Shi J. Dai M. Qiao F. Li W. Xu J. Chen K.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.425, Iss.1, 2003-02, pp. : 221-224

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Capacitance-voltage study of single-crystalline Si dots on ultrathin buried SiO 2 formed by nanometer-scale local oxidation

By Ishikawa Y. Kosugi M. Kumezawa M. Tsuchiya T. Tabe M.

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 69-72

Elsevier

Access to resources Recommend Favorite

Study of structural and optical properties of nanocrystalline silicon embedded in SiO 2

By Yun F. Hinds B.J. Hatatani S. Oda S. Zhao Q.X. Willander M.

Thin Solid Films, Vol. 375, Iss. 1, 2000-10 ,pp. : 137-141

Elsevier

Access to resources Recommend Favorite

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 516-519

Trans Tech Publications

Access to resources Recommend Favorite

Investigation of the Near-Surface Silicon Layers in SiO₂–Si Structures

By Kulinich O. A. Glauberman M. A. Sadova N. N.

Russian Physics Journal, Vol. 46, Iss. 10, 2003-10 ,pp. : 1029-1033

Springer Publishing Company

Access to resources Recommend Favorite

RF-magnetron-sputtered heteroepitaxial YSZ and CeO 2 /YSZ/Si(001) thin films with improved capacitance-voltage characteristics

By Wakiya N. Yoshida M. Kiguchi T. Shinozaki K. Mizutani N.

Thin Solid Films, Vol. 411, Iss. 2, 2002-05 ,pp. : 268-273

Elsevier

Access to resources Recommend Favorite