Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S -parameters
Publisher： Cambridge University Press
E-ISSN： 1759-0795|7|3-4|287-296
ISSN： 1759-0787
Source： International Journal of Microwave and Wireless Technologies, Vol.7, Iss.3-4, 2015-06, pp. : 287-296
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