Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

By Aubry R.   Dua C.   Jacquet J.-C.   Lemaire F.   Galtier P.   Dessertenne B.   Cordier Y.   DiForte-Poisson M.-A.   Delage S. L.  

EPJ Applied Physics (The), Vol. 30, Iss. 2, 2005-03 ,pp. : 77-82

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Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors

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EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 293-296

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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors

By Lin D.F.   Wang X.L.   Xiao H.L.   Wang C.M.   Jiang L.J.   Feng C.   Chen H.   Hou Q.F.   Deng Q.W.   Bi Y.   Kang H.  

EPJ Applied Physics (The), Vol. 55, Iss. 3, 2011-08 ,pp. : 30104-30104

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Temperature mapping of Al_0.85In_0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

By Gonschorek M.   Simeonov D.   Carlin J.-F.   Feltin E.   Py M. A.   Grandjean N.  

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Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics

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