Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors

Author: Aubry R.   Dua C.   Jacquet J.-C.   Lemaire F.   Galtier P.   Dessertenne B.   Cordier Y.   DiForte-Poisson M. -A.   Delage S. L.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|293-296

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 293-296

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