Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Author: Gonschorek M.   Simeonov D.   Carlin J.-F.   Feltin E.   Py M. A.   Grandjean N.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|47|3|30301-30301

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.47, Iss.3, 2009-05, pp. : 30301-30301

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