Publisher: Edp Sciences
E-ISSN: 1764-7177|03|C3|C3-449-C3-456
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.03, Iss.C3, 1993-08, pp. : C3-449-C3-456
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :
GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :
EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :