Publisher： Edp Sciences
E-ISSN： 1764-7177|05|C5|C5-1101-C5-1108
ISSN： 1155-4339
Source： Le Journal de Physique IV, Vol.05, Iss.C5, 1995-06, pp. : C5-1101-C5-1108
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD
Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. :
Access to resources
Recommend
Silicon atomic layer growth using flash heating in CVD
Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. :
By Burbaev T. Kurbatov V. Rzaev M. Pogosov A. Sibel’din N. Tsvetkov V. Lichtenberger H. Schäffler F. Leitao J. Sobolev N. Carmo M.
Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. :
Atomic Layer Epitaxy Growth of AIN Thin Films
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :
Atomic Layer-by-Layer MOCVD of Oxide Superconductors
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :