Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature

Publisher： Edp Sciences

E-ISSN： 1764-7177|04|C6|C6-13-C6-18

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.04, Iss.C6, 1994-06, pp. : C6-13-C6-18

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