Hot carrier effects in sub-0.1 µm gate length MOSFETs between room and liquid helium temperatures

Publisher： Edp Sciences

E-ISSN： 1764-7177|04|C6|C6-75-C6-80

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.04, Iss.C6, 1994-06, pp. : C6-75-C6-80

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Performances and physical mechanisms in sub-0.1 µm gate length LDD MOSFETs at low temperature

By  

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-13-C6-18

Edp Sciences

Access to resources Recommend Favorite

Temperature dependence of hot-carrier effects in 0.2 µm N- and P-channel fully-depleted Unibond MOSFETs

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-13-Pr3-16

Edp Sciences

Access to resources Recommend Favorite

Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs

By  

Le Journal de Physique IV, Vol. 06, Iss. C3, 1996-04 ,pp. : C3-49-C3-54

Edp Sciences

Access to resources Recommend Favorite

Low temperature operation of ultra-thin gate oxide sub-0.1 $\mu$m MOSFETs

By  

Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. : 57-60

Edp Sciences

Access to resources Recommend Favorite

Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature

By  

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-19-C6-24

Edp Sciences

Access to resources Recommend Favorite