Publisher: Edp Sciences
E-ISSN: 1764-7177|06|C3|C3-73-C3-78
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.06, Iss.C3, 1996-04, pp. : C3-73-C3-78
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide
Journal of Physics: Conference Series , Vol. 352, Iss. 1, 2012-03 ,pp. :
An interdigital gate MOSFET for photodetection
Journal de Physique III, Vol. 2, Iss. 12, 1992-12 ,pp. :