A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Publisher: IOP Publishing

E-ISSN: 1741-4199|23|11|118505-118510

ISSN: 1674-1056

Source: Chinese Physics B, Vol.23, Iss.11, 2014-11, pp. : 118505-118510

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Abstract