Related content

Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K

By  

Le Journal de Physique IV, Vol. 06, Iss. C3, 1996-04 ,pp. : C3-55-C3-59

Edp Sciences

Access to resources Recommend Favorite

A new method to extract the effective trap density at the buried oxide/underlying substrate interface in enhancement-mode SOI MOSFETs at low temperatures

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-45-Pr3-48

Edp Sciences

Access to resources Recommend Favorite

Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors

By Li-Juan Ma   Xiao-Li Ji   Yuan-Cong Chen   Hao-Guang Xia   Chen-Xin Zhu   Qiang Guo   Feng Yan  

Chinese Physics Letters, Vol. 31, Iss. 9, 2014-09 ,pp. : 97302-97304

IOP Publishing

Access to resources Recommend Favorite

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-25-Pr3-28

Edp Sciences

Access to resources Recommend Favorite

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K

By  

Le Journal de Physique IV, Vol. 06, Iss. C3, 1996-04 ,pp. : C3-73-C3-78

Edp Sciences

Access to resources Recommend Favorite