High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (δ-PHEMT's)

Publisher： Edp Sciences

E-ISSN： 1764-7177|11|PR3|Pr3-945-Pr3-950

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-945-Pr3-950

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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