Effect of TaSi2 and WSi2 deposition on interfacial defects and Fowler-Nordheim injection in polycide gate SiO2 MOS capacitors

Publisher： Edp Sciences

E-ISSN： 1764-7177|11|PR11|Pr11-199-Pr11-203

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR11, 2001-12, pp. : Pr11-199-Pr11-203

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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