Publisher: Edp Sciences
E-ISSN: 1160-8161|23|S3|40-42
ISSN: 1160-8161
Source: Journal de Physique Appliqué, Vol.23, Iss.S3, 1962-03, pp. : 40-42
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Fast coincidence circuits using transistors in the avalanche region.
Journal de Physique Appliqué, Vol. 22, Iss. S2, 1961-02 ,pp. :
Mode Transition of Trichel pulses
Journal of Physics: Conference Series , Vol. 652, Iss. 1, 2015-11 ,pp. :
A protein biosensor using Geiger mode avalanche photodiodes
Journal of Physics: Conference Series , Vol. 10, Iss. 1, 2005-01 ,pp. :
Modelling of Hfe avalanche degradation in gate controlled bipolar transistors
Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. :
Circuits rapides utilisant des transistors en régime d'avalanche
Revue de Physique Appliquée (Paris), Vol. 4, Iss. 2, 1969-06 ,pp. :