A model of the leakage current in n-channel silicon-on-sapphire most's

Publisher： Edp Sciences

E-ISSN： 0035-1687|13|12|609-613

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.13, Iss.12, 1978-12, pp. : 609-613

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