Related content

Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield

By  

Journal de Physique III, Vol. 7, Iss. 7, 1997-07 ,pp. : 1425-1433

Edp Sciences

Access to resources Recommend Favorite

Laser optoacoustic non-destructive method of thickness measurement of subsurface damaged layer in machined silicon wafers

By  

Journal of Physics: Conference Series , Vol. 214, Iss. 1, 2010-03 ,pp. : 269-272

IOP Publishing

Access to resources Recommend Favorite

Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers

By Svetlov S.   Chalkov V.   Shengurov V.   Drozdov Yu.   Krasil’nik Z.   Krasil’nikova L.   Stepikhova M.   Pavlov D.   Pavlova T.   Shilyaev P.   Khokhlov A.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 10-12

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Heat Diffusion in an Optical Logic Gate Array on Silicon-on-Sapphire

By  

Journal de Physique III, Vol. 7, Iss. 3, 1997-03 ,pp. : 739-748

Edp Sciences

Access to resources Recommend Favorite

Hot electrons injection into the oxide of a silicon-on-sapphire igfet at low operating voltage

By  

Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. : 619-624

Edp Sciences

Access to resources Recommend Favorite