Publisher: Edp Sciences
E-ISSN: 1286-4897|7|3|739-748
ISSN: 1155-4320
Source: Journal de Physique III, Vol.7, Iss.3, 1997-03, pp. : 739-748
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
A model of the leakage current in n-channel silicon-on-sapphire most's
Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. :