Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon

Publisher: Edp Sciences

E-ISSN: 0035-1687|18|9|557-560

ISSN: 0035-1687

Source: Revue de Physique Appliquée (Paris), Vol.18, Iss.9, 1983-09, pp. : 557-560

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