Influence and passivation of extended crystallographic defects in polycrystalline silicon

Publisher： Edp Sciences

E-ISSN： 0035-1687|22|7|637-643

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.22, Iss.7, 1987-07, pp. : 637-643

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