ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD

Publisher： Edp Sciences

E-ISSN： 0449-1947|50|C6|C6-154-C6-154

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.50, Iss.C6, 1989-06, pp. : C6-154-C6-154

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