Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield

Publisher： Edp Sciences

E-ISSN： 1286-4897|7|7|1425-1433

ISSN： 1155-4320

Source： Journal de Physique III, Vol.7, Iss.7, 1997-07, pp. : 1425-1433

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