EARLY STAGES OF METAL-Si (Ge) COUMPOUND FORMATION : A FIM STUDY OF INTERFACIAL ATOMIC STRUCTURES

E-ISSN： 0449-1947|47|C7|C7-327-C7-332

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.47, Iss.C7, 1986-11, pp. : C7-327-C7-332

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Formation of a low-resistivity penetrating metal-Si layer under the action of CO₂ laser radiation

By Shkumbatyuk P.

Technical Physics Letters, Vol. 24, Iss. 2, 1998-02 ,pp. : 108-109

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

By Rui Wu Li-Li Wang Yi Zhang Xu-Cun Ma Jin-Feng Jia Qi-Kun Xue

Chinese Physics Letters, Vol. 27, Iss. 2, 2010-02 ,pp. : 26802-26805

IOP Publishing

Access to resources Recommend Favorite

FRONTIERS OF INTERFACIAL AND ATOMIC STRUCTURES STUDIES

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-13-C1-22

Edp Sciences

Access to resources Recommend Favorite

ELECTRONIC PROPERTIES AT ABRUPT METAL-Si (III) INTERFACES

Le Journal de Physique Colloques, Vol. 45, Iss. C5, 1984-04 ,pp. : C5-419-C5-425

Edp Sciences

Access to resources Recommend Favorite

Atomic layer doping of SiGe

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-295-Pr8-305

Edp Sciences

Access to resources Recommend Favorite