Publisher: Edp Sciences
E-ISSN: 0449-1947|49|C4|C4-75-C4-78
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-75-C4-78
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction
Sensors, Vol. 9, Iss. 10, 2009-10 ,pp. :
Low temperature CMOS-compatible JFET's
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :
Scaling limits and reliability of SOI CMOS technology
Journal of Physics: Conference Series , Vol. 10, Iss. 1, 2005-01 ,pp. :