4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|669-672

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 669-672

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 864-867

Trans Tech Publications

Access to resources Recommend Favorite

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 327-330

Trans Tech Publications

Access to resources Recommend Favorite

Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 821-824

Trans Tech Publications

Access to resources Recommend Favorite

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1103-1106

Trans Tech Publications

Access to resources Recommend Favorite

Trench-MOSFETs on 4H-SiC

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 848-851

Trans Tech Publications

Access to resources Recommend Favorite