Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|383-386
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 383-386
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Access to resources
Recommend
Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
On mechanisms of argon addition influence on etching rate in chlorine plasma
By Efremov A.M. Kim D.-P. Kim C.-I.
Thin Solid Films, Vol. 435, Iss. 1, 2003-07 ,pp. :
Proximity-controlled silicon carbide etching in inductively coupled plasma
By Kim B. Kim S. Ann S.-C. Lee B.-T.
Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. :