Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|463-466
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 463-466
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
10+ kV Implantation-Free 4H-SiC PiN Diodes
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :