The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2017|897|467-470

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 467-470

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract