Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2017|897|419-422

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 419-422

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Abstract