Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2015|821|628-631

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 628-631

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Abstract