Point Defects Investigation of High Energy Proton Irradiated SiC p⁺-i-n Diodes

E-ISSN： 1662-9752|2017|897|246-249

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 246-249

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p⁺−i−n Diodes

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 628-631

Trans Tech Publications

Access to resources Recommend Favorite

Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 439-442

Trans Tech Publications

Access to resources Recommend Favorite

Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 620-623

Trans Tech Publications

Access to resources Recommend Favorite

DLTS Study on Al⁺ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 279-282

Trans Tech Publications

Access to resources Recommend Favorite

Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p⁺-p^–-n⁺ 4H-SiC Drift Step Recovery Diodes

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 632-635

Trans Tech Publications

Access to resources Recommend Favorite