Analysis of Zr_xSi_yO_z as High-k Dielectric for 4H-SiC MOSFETs

E-ISSN： 1662-9752|2018|924|939-942

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 939-942

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