Influence and Mutual Interaction of Process Parameters on the Z_1/2 Defect Concentration during Epitaxy of 4H-SiC

E-ISSN： 1662-9752|2018|924|112-115

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 112-115

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Analysis of Zr_xSi_yO_z as High-k Dielectric for 4H-SiC MOSFETs

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 939-942

Trans Tech Publications

Access to resources Recommend Favorite

Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 393-396

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of SiO₂/4H-SiC(0001) Interface Properties by H₂ and Ar Mixture Gas Treatment Prior to SiO₂ Deposition

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 461-464

Trans Tech Publications

Access to resources Recommend Favorite

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 473-476

Trans Tech Publications

Access to resources Recommend Favorite

Effects of CF₄ Surface Etching on 4H-SiC MOS Capacitors

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 465-468

Trans Tech Publications

Access to resources Recommend Favorite